Mode control of electrically injected semiconductor laser with parity-tim...
Eight-channel hybrid-integrated laser array with 100 GHz channel spacing
Numerical simulation analysis of effect of energy band alignment and func...
Observation of nonreciprocal magnetophonon effect in nonencapsulated few-...
Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS...
Even-odd-dependent optical transitions of zigzag monolayer black phosphor...
Role of interfacial 2D graphene in high performance 3D graphene/germanium...
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on S...
Effect of Processing Technique Factors on Structure and Photophysical Pro...
"Fast" Plasmons Propagating in Graphene Plasmonic Waveguides with Negativ...

Tunable Dual Broadband Terahertz Metamaterial Absorber Based on Vanadium Dioxide


Author(s): Jiao, XF (Jiao, Xiao-Fei); Zhang, ZH (Zhang, Zi-Heng); Li, T (Li, Tong); Xu, Y (Xu, Yun); Song, GF (Song, Guo-Feng)

Source: APPLIED SCIENCES-BASEL Volume: 10 Issue: 20 Article Number: 7259 DOI: 10.3390/app10207259 Published: OCT 2020

Abstract: With the rapid development of terahertz technology, tunable high-efficiency broadband functional devices have become a research trend. In this research, a dynamically tunable dual broadband terahertz absorber based on the metamaterial structure of vanadium dioxide (VO2) is proposed and analyzed. The metamaterial is composed of patterned VO2 on the top layer, gold on the bottom layer and silicon dioxide (SiO2) as the middle dielectric layer. Simulation results show that two bandwidths of 90% absorption reach as wide as 2.32 THz from 1.87 to 4.19 THz and 2.03 THz from 8.70 to 10.73 THz under normal incidence. By changing the conductivity of VO2, the absorptance dynamically tuned from 2% to 94%. Moreover, it is verified that absorptance is insensitive to the polarization angle. The physical origin of this absorber is revealed through interference theory and matching impedance theory. We further investigate the physical mechanism of dual broadband absorption through electric field analysis. This design has potential applications in imaging, modulation and stealth technology.

Accession Number: WOS:000586175100001

eISSN: 2076-3417

Full Text:


北京市海淀區清華東路甲35號 北京912信箱 (100083)




版權所有 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

打杭州麻将的app有哪些 福彩3d500期开奖结走势图 手机棋牌游戏代理网址 上海时时乐开奖查询 湖北30选5开走势图 青海西宁快三开奖结果 天津时时彩几点停售 同城游美女捕鱼游戏 微信红包群二维码加入 325捕鱼游戏平台下载 甘肃11选5选号技巧 2017彩金捕鱼ol微信红包 贵阳捉鸡麻将下载安 天天打麻将赢话费 一分快三玩法介绍 138246六尾中特 广西快3专家预测