Effect of Processing Technique Factors on Structure and Photophysical Pro...
"Fast" Plasmons Propagating in Graphene Plasmonic Waveguides with Negativ...
Broadband High-Efficiency Grating Couplers for Perfectly Vertical Fiber-t...
GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate
Tunable Electromagnetically Induced Transparency-Like Spectrum in Lithium...
A Benchmark Dataset for RSVP-Based Brain-Computer Interfaces
Electric-field-driven exciton vortices in transition metal dichalcogenide...
Frequency-Tunable Broadband Microwave Comb Generation Using an Integrated...
Understanding angle-resolved polarized Raman scattering from black phosph...
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGe...
官方微信
友情鏈接

Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS2 with an Electric Double Layer Interface

2020-11-12

Author(s): Zhang, X (Zhang, Xi); Zhu, TS (Zhu, Tongshuai); Huang, JW (Huang, Junwei); Wang, Q (Wang, Qian); Cong, X (Cong, Xin); Bi, XY (Bi, Xiangyu); Tang, M (Tang, Ming); Zhang, CR (Zhang, Caorong); Zhou, L (Zhou, Ling); Zhang, DQ (Zhang, Dongqin); Su, T (Su, Tong); Dai, XT (Dai, Xueting); Meng, K (Meng, Kui); Li, ZY (Li, Zeya); Qu, CY (Qu, Caiyu); Zhao, WW (Zhao, Wei-Wei); Tan, PH (Tan, Ping-Heng); Zhang, HJ (Zhang, Haijun); Yuan, HT (Yuan, Hongtao)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 12 Issue: 41 Pages: 46900-46907 DOI: 10.1021/acsami.0c12165 Published: OCT 14 2020

Abstract: Interlayer coupling in two-dimensional (2D) layered materials plays an important role in controlling their properties. 2H- and 3R-MoS2 with different stacking orders and the resulting interlayer coupling have been recently discovered to have different band structures and a contrast behavior in valley physics. However, the role of carrier doping in interlayer coupling in 2D materials remains elusive. Here, based on the electric double layer interface, we demonstrated the experimental observation of carrier doping-enhanced interlayer coupling in 3R-MoS2. A remarkable tuning of interlayer Raman modes can be observed by changing the stacking sequence and carrier doping near their monolayer limit. The modulated interlayer vibration modes originated from the interlayer coupling show a doping-induced blue shift and are supposed to be associated with the interlayer coupling enhancement, which is further verified using our first-principles calculations. Such an electrical control of interlayer coupling of layered materials in an electrical gating geometry provides a new degree of freedom to modify the physical properties in 2D materials.

Accession Number: WOS:000582345700121

PubMed ID: 32931238

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Zhang, Haijun                  0000-0002-9958-1102

ISSN: 1944-8244

eISSN: 1944-8252

Full Text: https://pubs.acs.org/doi/10.1021/acsami.0c12165



關于我們
下載視頻觀看
聯系方式
通信地址

北京市海淀區清華東路甲35號 北京912信箱 (100083)

電話

010-82304210/010-82305052(傳真)

E-mail

semi@semi.ac.cn

交通地圖
版權所有 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

打杭州麻将的app有哪些 (★^O^★)MG经典243客户端下载 老钱庄博彩三肖中特 (^ω^)MG躲猫猫奖金赔率 25选5预测推荐 6场半全场奖金 (★^O^★)MG黄金农场如何爆大奖 (★^O^★)MG真爱_电子游艺 算命幸运数字 弟118期四不像特码图 (-^O^-)MG地府烈焰玩法介绍 (*^▽^*)MG热力宝石游戏规则 福彩黑龙江p62开奖号 (*^▽^*)MG冰球突破app (^ω^)MG恋曲1980_官方版 体彩22选5胆拖玩法 广东26选5历史开奖结果查询