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A Novel HighQLame-Mode Bulk Resonator with Low Bias Voltage

2020-10-29

Author(s): Wang, TY (Wang, Tianyun); Chen, ZJ (Chen, Zeji); Jia, QQ (Jia, Qianqian); Yuan, Q (Yuan, Quan); Yang, JL (Yang, Jinling); Yang, FH (Yang, Fuhua)

Source: MICROMACHINES Volume: 11 Issue: 8 Article Number: 737 DOI: 10.3390/mi11080737 Published: AUG 2020

Abstract: This work reports a novel silicon on insulator (SOI)-based high quality factor (Qfactor) Lame-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and highQfactors over 8000 in air and over 30,000 in vacuum. The highQvalues, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with highQ. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

Accession Number: WOS:000577883900001

PubMed ID: 32751297

eISSN: 2072-666X

Full Text: https://www.mdpi.com/2072-666X/11/8/737



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